Availability:
33974
pieces
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263AB)
SeriesQFET®
Rds On (Max) @ Id, Vgs60 mOhm @ 16.75A, 10V
Power Dissipation (Max)3.75W (Ta), 155W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesFQB34P10TMCT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time21 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionP-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C33.5A (Tc)
