FQD8P10TM
| Part No | FQD8P10TM |
|---|---|
| Manufacturer | onsemi |
| Description | MOSFET P-CH 100V 6.6A DPAK |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
21078
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8532 | |
| 10 | 0.8361 | |
| 100 | 0.8105 | |
| 1000 | 0.7849 | |
| 10000 | 0.7508 |
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-Pak
SeriesQFET®
Rds On (Max) @ Id, Vgs530 mOhm @ 3.3A, 10V
Power Dissipation (Max)2.5W (Ta), 44W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFQD8P10TM-ND
FQD8P10TMTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time25 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionP-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
