FQPF10N20C
| Part No | FQPF10N20C |
|---|---|
| Manufacturer | onsemi |
| Description | MOSFET N-CH 200V 9.5A TO220F |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
24875
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.564 | |
| 10 | 0.5527 | |
| 100 | 0.5358 | |
| 1000 | 0.5189 | |
| 10000 | 0.4963 |
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220F
SeriesQFET®
Rds On (Max) @ Id, Vgs360 mOhm @ 4.75A, 10V
Power Dissipation (Max)38W (Tc)
PackagingTube
Package / CaseTO-220-3 Full Pack
Other NamesFQPF10N20C-ND
FQPF10N20CFS
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time6 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 9.5A (Tc) 38W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
