MTW32N20E
| Part No | MTW32N20E |
|---|---|
| Manufacturer | onsemi |
| Description | MOSFET N-CH 200V 32A TO247 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18265
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.362 | |
| 10 | 5.2548 | |
| 100 | 5.0939 | |
| 1000 | 4.933 | |
| 10000 | 4.7186 |
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-247
Series-
Rds On (Max) @ Id, Vgs75 mOhm @ 16A, 10V
Power Dissipation (Max)180W (Tc)
PackagingTube
Package / CaseTO-247-3
Other NamesMTW32N20EOS
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds5000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 32A (Tc) 180W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C32A (Tc)
