NTB30N20T4G
RoHS

NTB30N20T4G

NTB30N20T4G

onsemi

MOSFET N-CH 200V 30A D2PAK

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NTB30N20T4G

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Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD2PAK
Series-
Rds On (Max) @ Id, Vgs81 mOhm @ 15A, 10V
Power Dissipation (Max)2W (Ta), 214W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesNTB30N20T4GOSCT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2335pF @ 25V
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 30A (Ta) 2W (Ta), 214W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C30A (Ta)