Availability:
35918
pieces
Specification
Vgs(th) (Max) @ Id1.5V @ 250µA
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageChipFET™
Series-
Rds On (Max) @ Id, Vgs80 mOhm @ 3.2A, 4.5V
Power Dissipation (Max)1.1W (Ta)
PackagingCut Tape (CT)
Package / Case8-SMD, Flat Lead
Other NamesNTHD3101FT1GOSCT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time41 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds680pF @ 10V
Gate Charge (Qg) (Max) @ Vgs7.4nC @ 4.5V
FET TypeP-Channel
FET FeatureSchottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Drain to Source Voltage (Vdss)20V
Detailed DescriptionP-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™
Current - Continuous Drain (Id) @ 25°C3.2A (Tj)
