SI1013R-T1-E3
RoHS

SI1013R-T1-E3

SI1013R-T1-E3

Vishay

MOSFET P-CH 20V 350MA SC-75A

Download Datasheet

SI1013R-T1-E3

Availability: 16644 pieces
Request Quotation
Specification
RoHSCompliant
MountSurface Mount
Width760 µm
Height700 µm
Length1.58 mm
Fall Time9 ns
Lead FreeLead Free
Rise Time9 ns
Rds On Max1.2 Ω
Resistance1.2 Ω
Case/PackageSOT-416
Number of Pins3
Power Dissipation150 mW
Number of Channels1
Number of Elements1
Turn-On Delay Time5 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Max Power Dissipation150 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance1.2 Ω
Gate to Source Voltage (Vgs)6 V
Continuous Drain Current (ID)350 mA
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V