SI1032X-T1-GE3
| Part No | SI1032X-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 20V 200MA SC89-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
17851
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4558 | |
| 10 | 0.4467 | |
| 100 | 0.433 | |
| 1000 | 0.4193 | |
| 10000 | 0.4011 |
Specification
RoHSCompliant
MountSurface Mount
Width950 µm
Height800 µm
Length1.7 mm
Weight29.993795 mg
Fall Time25 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time25 ns
REACH SVHCUnknown
Rds On Max5 Ω
Resistance5 Ω
Case/PackageSC
Number of Pins3
Power Dissipation300 mW
Threshold Voltage700 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time50 ns
Radiation HardeningNo
Turn-Off Delay Time50 ns
Element ConfigurationSingle
Max Power Dissipation300 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5 Ω
Gate to Source Voltage (Vgs)6 V
Continuous Drain Current (ID)200 mA
Drain to Source Voltage (Vdss)20 V
