SI2319DS-T1-GE3
| Part No | SI2319DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 40V 2.3A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19607
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.864 | |
| 10 | 0.8467 | |
| 100 | 0.8208 | |
| 1000 | 0.7949 | |
| 10000 | 0.7603 |
Specification
RoHSCompliant
MountSurface Mount
Weight1.437803 g
Fall Time25 ns
Rise Time15 ns
REACH SVHCUnknown
Rds On Max82 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
Case/PackageSOT-23
Number of Pins3
Input Capacitance470 pF
Power Dissipation750 mW
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Max Power Dissipation750 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance82 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)2.3 A
Drain to Source Voltage (Vdss)-40 V
