SI2323DS-T1-GE3
| Part No | SI2323DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 3.7A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
23194
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8165 | |
| 10 | 0.8002 | |
| 100 | 0.7757 | |
| 1000 | 0.7512 | |
| 10000 | 0.7185 |
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Fall Time43 ns
Lead FreeLead Free
Rise Time43 ns
REACH SVHCUnknown
Rds On Max39 mΩ
Resistance39 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-1 V
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance1.02 nF
Power Dissipation750 mW
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time71 ns
Element ConfigurationSingle
Max Power Dissipation750 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance31 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-3.7 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V
