SI4134DY-T1-GE3
RoHS

SI4134DY-T1-GE3

SI4134DY-T1-GE3

Vishay

MOSFET N-CH 30V 14A 8-SOIC

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SI4134DY-T1-GE3

Availability: 37743 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max540 mΩ
Resistance14 MΩ
Schedule B8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance180 pF
Power Dissipation5 W
Threshold Voltage1.8 V
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time14 ns
Element ConfigurationSingle
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance14 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9.9 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V