SI4660DY-T1-E3
| Part No | SI4660DY-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 25V 23.1A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Specification
RoHSCompliant
MountSurface Mount
Fall Time22 ns
Rise Time14 ns
Rds On Max5.8 mΩ
Case/PackageSOIC
Input Capacitance2.41 nF
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time95 ns
Element ConfigurationSingle
Max Power Dissipation5.6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.8 mΩ
Gate to Source Voltage (Vgs)16 V
Continuous Drain Current (ID)17.2 A
Drain to Source Voltage (Vdss)25 V
