SI7108DN-T1-GE3
| Part No | SI7108DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 20V 14A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
22868
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.2656 | |
| 10 | 2.2203 | |
| 100 | 2.1523 | |
| 1000 | 2.0844 | |
| 10000 | 1.9937 |
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Rise Time10 ns
REACH SVHCUnknown
Rds On Max4.9 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Power Dissipation1.5 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time60 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.9 mΩ
Gate to Source Voltage (Vgs)16 V
Continuous Drain Current (ID)14 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
