SI7414DN-T1-GE3
RoHS

SI7414DN-T1-GE3

SI7414DN-T1-GE3

Vishay

MOSFET N-CH 60V 5.6A 1212-8

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SI7414DN-T1-GE3

Availability: 16606 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time12 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCUnknown
Rds On Max25 mΩ
Resistance25 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs3 V
TerminationSMD/SMT
Case/Package1212
Number of Pins8
Power Dissipation1.5 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Dual Supply Voltage60 V
Radiation HardeningNo
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance25 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5.6 A
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V