SI7439DP-T1-E3
RoHS

SI7439DP-T1-E3

SI7439DP-T1-E3

Vishay

MOSFET P-CH 150V 3A PPAK SO-8

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SI7439DP-T1-E3

Availability: 19949 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time46 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time46 ns
REACH SVHCNo SVHC
Rds On Max90 mΩ
Resistance90 mΩ
Schedule B8541290080
Number of Pins8
Contact PlatingTin
Power Dissipation1.9 W
Threshold Voltage-4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time115 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance73 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-3 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-150 V
Drain to Source Breakdown Voltage-150 V