SI7489DP-T1-GE3
RoHS

SI7489DP-T1-GE3

SI7489DP-T1-GE3

Vishay

MOSFET P-CH 100V 28A PPAK SO-8

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SI7489DP-T1-GE3

Availability: 21231 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time100 ns
Lead FreeLead Free
Rise Time160 ns
REACH SVHCUnknown
Rds On Max41 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
Case/PackageSOIC
Number of Pins8
Input Capacitance4.6 nF
Power Dissipation5.2 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time100 ns
Element ConfigurationSingle
Max Power Dissipation83 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance33 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-7.8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-100 V
Drain to Source Breakdown Voltage-100 V