SI7898DP-T1-GE3
RoHS

SI7898DP-T1-GE3

SI7898DP-T1-GE3

Vishay

MOSFET N-CH 150V 3A PPAK SO-8

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SI7898DP-T1-GE3

Availability: 34743 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time10 ns
REACH SVHCNo SVHC
Rds On Max85 mΩ
Resistance85 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs4 V
TerminationSMD/SMT
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.9 W
Threshold Voltage4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time9 ns
Dual Supply Voltage150 V
Radiation HardeningNo
Turn-Off Delay Time24 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance85 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3 A
Drain to Source Voltage (Vdss)150 V
Drain to Source Breakdown Voltage150 V