SI8402DB-T1-E1
| Part No | SI8402DB-T1-E1 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 20V 5.3A 2X2 4-MFP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Specification
RoHSCompliant
MountSurface Mount
Width1.6002 mm
Height355.6 µm
Length1.5748 mm
Fall Time145 ns
Lead FreeLead Free
Rise Time145 ns
Rds On Max37 mΩ
Resistance37 MΩ
Number of Pins4
Power Dissipation1.47 W
Number of Elements1
Turn-On Delay Time30 ns
Radiation HardeningNo
Turn-Off Delay Time45 ns
Element ConfigurationSingle
Max Power Dissipation1.47 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance37 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)5.3 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
