SI8409DB-T1-E1
RoHS

SI8409DB-T1-E1

SI8409DB-T1-E1

Vishay

MOSFET P-CH 30V 4.6A 2X2 4-MFP

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SI8409DB-T1-E1

Availability: 15046 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width1.6 mm
Height360 µm
Length1.6 mm
Fall Time35 ns
Lead FreeLead Free
Rise Time35 ns
Rds On Max46 mΩ
Resistance46 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins4
Power Dissipation1.47 W
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time140 ns
Max Power Dissipation1.47 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance1.052 Ω
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)4.6 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage-30 V