SIA414DJ-T1-GE3
| Part No | SIA414DJ-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 8V 12A SC70-6 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
17576
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.026 | |
| 10 | 1.0055 | |
| 100 | 0.9747 | |
| 1000 | 0.9439 | |
| 10000 | 0.9029 |
Specification
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time20 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCUnknown
Rds On Max11 mΩ
Resistance11 MΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Nominal Vgs800 mV
Case/PackageSC
Number of Pins6
Input Capacitance1.8 nF
Power Dissipation3.5 W
Threshold Voltage800 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time65 ns
Element ConfigurationSingle
Max Power Dissipation3.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance11 mΩ
Gate to Source Voltage (Vgs)5 V
Continuous Drain Current (ID)12 A
Drain to Source Voltage (Vdss)8 V
Drain to Source Breakdown Voltage8 V
