SIR172DP-T1-GE3
| Part No | SIR172DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 20A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Specification
RoHSCompliant
MountSurface Mount
Weight506.605978 mg
Fall Time13 ns
Lead FreeLead Free
Rise Time19 ns
REACH SVHCUnknown
Rds On Max8.9 mΩ
Resistance12.4 MΩ
Nominal Vgs2.5 V
Number of Pins8
Input Capacitance997 pF
Power Dissipation3.9 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time19 ns
Radiation HardeningNo
Turn-Off Delay Time19 ns
Element ConfigurationSingle
Max Power Dissipation29.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance8.9 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)20 A
Drain to Source Voltage (Vdss)30 V
