SIR846ADP-T1-GE3
RoHS

SIR846ADP-T1-GE3

SIR846ADP-T1-GE3

Vishay

MOSFET N-CH 100V 60A PPAK SO-8

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SIR846ADP-T1-GE3

Availability: 17169 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width5.26 mm
Height1.12 mm
Length6.25 mm
Weight506.605978 mg
Lead FreeLead Free
PackagingDigi-Reel®
REACH SVHCUnknown
Rds On Max7.8 mΩ
Resistance9.5 MΩ
Number of Pins8
Contact PlatingTin
Input Capacitance2.35 nF
Power Dissipation5.4 W
Threshold Voltage1.8 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Element ConfigurationSingle
Max Power Dissipation83 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.8 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)60 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V