Availability:
19597
pieces
Specification
Vgs(th) (Max) @ Id2.1V @ 250µA
Vgs (Max)+16V, -12V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePowerPAK® SO-8
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs0.58 mOhm @ 20A, 10V
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
PackagingCut Tape (CT)
Package / CasePowerPAK® SO-8
Other NamesSIRA20DP-T1-RE3CT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time32 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds10850pF @ 10V
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)25V
Detailed DescriptionN-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C81.7A (Ta), 100A (Tc)
