SISA10DN-T1-GE3
RoHS

SISA10DN-T1-GE3

SISA10DN-T1-GE3

Vishay

MOSFET N-CH 30V 30A 1212-8

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SISA10DN-T1-GE3

Availability: 15102 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width3.4 mm
Height1.12 mm
Length3.4 mm
Fall Time20 ns
REACH SVHCUnknown
Rds On Max3.7 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance2.425 nF
Power Dissipation3.6 W
Threshold Voltage1.1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time27 ns
Element ConfigurationDual
Max Power Dissipation39 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)30 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V