SQ2318AES-T1_GE3
RoHS

SQ2318AES-T1_GE3

SQ2318AES-T1_GE3

Vishay

MOSFET N-CHAN 40V SOT23

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SQ2318AES-T1_GE3

Availability: 47604 pieces
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Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time5.7 ns
Rise Time8.4 ns
REACH SVHCNo SVHC
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23
Number of Pins3
Contact PlatingTin
Power Dissipation3 W
Threshold Voltage2 V
Number of Channels1
Turn-On Delay Time7.5 ns
Turn-Off Delay Time12 ns
Max Power Dissipation3.3 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance26 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)40 V
Drain to Source Breakdown Voltage40 V