SQ2362ES-T1_GE3
RoHS

SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

Vishay

MOSFET N-CH 60V 4.4A TO236

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SQ2362ES-T1_GE3

Availability: 35937 pieces
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Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time18 ns
Lead FreeLead Free
Rise Time20 ns
REACH SVHCNo SVHC
Rds On Max95 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-236-3
Number of Pins3
Input Capacitance1 nF
Power Dissipation3 W
Threshold Voltage1.5 V
Number of Channels1
Turn-On Delay Time6 ns
Turn-Off Delay Time14 ns
Max Power Dissipation5 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance57 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)4.3 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V