SQ3427AEEV-T1_GE3
RoHS

SQ3427AEEV-T1_GE3

SQ3427AEEV-T1_GE3

Vishay

MOSFET P-CH 60V 6TSOP

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SQ3427AEEV-T1_GE3

Availability: 19775 pieces
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Specification
RoHSCompliant
MountSurface Mount
Height1.1 mm
Fall Time33 ns
Lead FreeLead Free
Rise Time24 ns
REACH SVHCNo SVHC
Rds On Max95 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Input Capacitance1 nF
Power Dissipation5 W
Threshold Voltage-2 V
Number of Channels1
Turn-On Delay Time8 ns
Turn-Off Delay Time26 ns
Max Power Dissipation5 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance79 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-5.3 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)-60 V
Drain to Source Breakdown Voltage-60 V