IXTA1R4N120P
| Part No | IXTA1R4N120P |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 1200V 1.4A TO263 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
13479
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.8216 | |
| 10 | 4.7252 | |
| 100 | 4.5805 | |
| 1000 | 4.4359 | |
| 10000 | 4.243 |
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C1.4A (Tc)
DriveVoltage(MaxRdsOn13Ohm @ 500mA, 10V
MinRdsOn)4.5V @ 100µA
RdsOn(Max)@Id24.8 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id666 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds86W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureTO-263AA
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
