IXTA2N80
| Part No | IXTA2N80 |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 800V 2A TO263 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Specification
PackageBox
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)6.2Ohm @ 500mA, 10V
RdsOn(Max)@Id5.5V @ 250µA
Vgs22 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)440 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature54W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
