
Availability:
10485
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)200mW
Collector Current (Ic)150mA
DC Current Gain (hFE@Ic,Vce)-
Transition Frequency (fT)140MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@50mA,5mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)