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Specification
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)300mW
Collector Current (Ic)2A
DC Current Gain (hFE@Ic,Vce)100@2A,2V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)350mV@2A,200mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)