
Availability:
10489
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)300mW
Collector Current (Ic)500mA
DC Current Gain (hFE@Ic,Vce)120@100mA,3V
Transition Frequency (fT)200MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)600mV@500mA,50mA
Transistor Type2u4e2aPNP
Operating Temperature+150u2103@(Tj)