2SJ601-Z
RoHS

2SJ601-Z

2SJ601-Z

Renesas

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2SJ601-Z

Availability: 11057 pieces
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Specification
MfrRenesas Electronics America Inc
Series-
PackageTray
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25u00b0C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs31mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Vgs (Max)u00b120V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W (Ta), 65W (Tc)
Operating Temperature150u00b0C
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (MP-3ZK)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63