Availability:
13911
pieces
Specification
MfrRenesas Electronics America Inc
Series-
PackageBulk
Part StatusLast Time Buy
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25u00b0C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs125mOhm @ 6A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Vgs (Max)u00b120V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 10 V
FET Feature-
Power Dissipation (Max)2W (Ta), 20W (Tc)
Operating Temperature150u00b0C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Isolated Tab
Package / CaseTO-220-3 Isolated Tab
