Spot quantity:
18560
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.0997 | |
| 10 | 0.0977 | |
| 100 | 0.0947 | |
| 1000 | 0.0917 | |
| 10000 | 0.0878 |
Specification
MfrToshiba Semiconductor and Storage
Seriesu03c0-MOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25u00b0C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)u00b130V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 25 V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature150u00b0C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack
Base Product Number2SK3564
