
Availability:
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Specification
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)200mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)200@2mA,5V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@100mA,5mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)